Spectroscopic ellipsometry over the photon energy 1.5-5.0 eV is used to derive the dielectricfunction of V2O5 nanocrystalline films deposited by plasma-enhanced chemical vapor deposition.The dispersion in the optical response is described by a combination of Lorentzian oscillators. Theresults are obtained from a microstructure-dependent model, which considers the anisotropy of theV2O5 crystallites into the bulk film, as well as the presence of interface and surface roughness layers.The variation of the V2O5 thin-film dielectric function upon film crystallinity, going from purenanocrystalline to amorphous material, is also investigated.
Dielectric function of V2O5 nanocrystalline films by spectroscopic ellipsometry: characterization of microstructure
M Losurdo;G Bruno;D Barreca;
2000
Abstract
Spectroscopic ellipsometry over the photon energy 1.5-5.0 eV is used to derive the dielectricfunction of V2O5 nanocrystalline films deposited by plasma-enhanced chemical vapor deposition.The dispersion in the optical response is described by a combination of Lorentzian oscillators. Theresults are obtained from a microstructure-dependent model, which considers the anisotropy of theV2O5 crystallites into the bulk film, as well as the presence of interface and surface roughness layers.The variation of the V2O5 thin-film dielectric function upon film crystallinity, going from purenanocrystalline to amorphous material, is also investigated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
