For the continuous miniaturization of silicon devices, various alternatives are tested during front-end process development. Because of the enormous costs of experimental validation, and to save time, technology-computer-aided design (TCAD) is used extensively in the industry. But the success of TCAD is limited when device simulation is based on incorrect doping distributions. However, the rapid technological progress requires models for processes outside the limits of experimental knowledge. Such models often do not exist or are not accurate enough. Based on suggestions and by a direct initiative of the the leading European semiconductor manufacturers, the program FRENDTECH aimed at providing missing top priority models in the area of ion implantation, diffusion, and oxidation.
Front-End Models for Silicon Future Technology
Privitera V;Scalese S;La Magna A;Mannino G;
2004
Abstract
For the continuous miniaturization of silicon devices, various alternatives are tested during front-end process development. Because of the enormous costs of experimental validation, and to save time, technology-computer-aided design (TCAD) is used extensively in the industry. But the success of TCAD is limited when device simulation is based on incorrect doping distributions. However, the rapid technological progress requires models for processes outside the limits of experimental knowledge. Such models often do not exist or are not accurate enough. Based on suggestions and by a direct initiative of the the leading European semiconductor manufacturers, the program FRENDTECH aimed at providing missing top priority models in the area of ion implantation, diffusion, and oxidation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
