Vertically aligned multi-walled carbon nanotubes (MWCNTs) are promising electron emitters. In this field, the development of a cheap and viable processing technology for the fabrication of high density and stable cold emission sources for industrial applications is one of the main concerns. The Catalyzed-Chemical Vapour Deposition (C-CVD) of MWCNTs on a titanium nitride barrier layer on silicon, using nickel as a catalyst, has been envisaged as a possible solution. Field emission current densities up to 7.8 mA/cm2 at applied electrical field of 2.9 V/?m have been measured on as-grown samples, using a properly designed measurement system. Changes in the MWCNTs emission behaviour after rapid thermal annealing treatments at high temperatures (800 °C - 1000 °C), performed in forming gas atmosphere, are discussed taking into account micro-Raman spectra and Scanning Electron Microscopy observations
Multi-walled carbon nanotubes electron emission source for industrial applications
Giulio Paolo Veronese;Rita Rizzoli
2009
Abstract
Vertically aligned multi-walled carbon nanotubes (MWCNTs) are promising electron emitters. In this field, the development of a cheap and viable processing technology for the fabrication of high density and stable cold emission sources for industrial applications is one of the main concerns. The Catalyzed-Chemical Vapour Deposition (C-CVD) of MWCNTs on a titanium nitride barrier layer on silicon, using nickel as a catalyst, has been envisaged as a possible solution. Field emission current densities up to 7.8 mA/cm2 at applied electrical field of 2.9 V/?m have been measured on as-grown samples, using a properly designed measurement system. Changes in the MWCNTs emission behaviour after rapid thermal annealing treatments at high temperatures (800 °C - 1000 °C), performed in forming gas atmosphere, are discussed taking into account micro-Raman spectra and Scanning Electron Microscopy observationsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.