Due to the strong temperature dependence of the capture rate, the DX centre in AlGaAs is expected to show non-equilibrium occupancy at low temperatures. Results of Thermally Stimulated Capacitance and Capacitance-Voltage measurements, carried out at 77 K on Au-Al(x)Ga1-xAs (x = 0.25) Schottky barriers, are strongly influenced by the cooling rate. This demonstrate that in practical experiments the free electron density commonly observed at low temperature is far from thermodynamical equilibrium
EVIDENCE FOR NON-EQUILIBRIUM FREE ELECTRON DENSITY IN A1GaAs AT LOW TEMPERATURES
S Franchi;E Gombia;
1991
Abstract
Due to the strong temperature dependence of the capture rate, the DX centre in AlGaAs is expected to show non-equilibrium occupancy at low temperatures. Results of Thermally Stimulated Capacitance and Capacitance-Voltage measurements, carried out at 77 K on Au-Al(x)Ga1-xAs (x = 0.25) Schottky barriers, are strongly influenced by the cooling rate. This demonstrate that in practical experiments the free electron density commonly observed at low temperature is far from thermodynamical equilibriumFile in questo prodotto:
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