Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x=9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001) GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures.
Exciton states in InxGa1-x As/GaAs double quantum wells: Normalized reflection spectra
D'Andrea A;Tomassini N;Ferrari L;Righini M;Selci S;Bruni;
1995
Abstract
Normalized reflection spectra in GaInAs/GaAs quantum wells are shown for two sets of samples with different alloy concentration (x=9% and 18.5%) and well thickness ranging from 1.5 nm to 25 nm. All samples were grown on (001) GaAs surface by Molecular Beam Epitaxy and characterized by RHEED and X-ray reflection diffraction. Exciton envelope function in effective mass approximation and optical response in polaritonic schema are computed. Normalized reflection spectroscopy has shown itself to be a well suited technique in order to study structural and electronic properties of confined quantum structures.File in questo prodotto:
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