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BRUNI, MARIA RITA

BRUNI, MARIA RITA  

Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata  

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Risultati 1 - 20 di 25 (tempo di esecuzione: 0.042 secondi).
Titolo Data di pubblicazione Autore(i) File
Optical properties of stepped InxGa1-xAs/GaAs quantum wells 1-gen-1998 D'Andrea, A; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, Mr; Schiumarini, D; Simeone, Mg
Optical properties of stepped InxGa1-xAs/GaAs quantum wells 1-gen-1998 D'Andrea, A; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, Mr; Schiumarini, D; Simeone, Mg
Second harmonic generation in stepped InAsGaAs/GaAs quantum wells 1-gen-1997 D'Andrea, A ; Tomassini, N ; Ferrari, L ; Righini, M ; Selci, S ; Bruni, MR ; Schiumarini, D ; Simeone, MG
Growth and characterization of strained III-V heterostructures 1-gen-1996 M.R. Bruni; N. Gambacorti; S. Kaciulis; G. Mattogno; M.G. Simeone
Interface abruptness in strained III-V heterostructures 1-gen-1996 Bruni, Mr; Kaciulis, S; Mattogno, G; Righini, G
Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells 1-gen-1996 Bruni, Mr; Gambacorti, N; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S
Depth profiling of InxGa1-xAs/GaAs quantum wells 1-gen-1995 M.R. Bruni; S. Kaciulis; F. Martelli; G. Mattogno; M.G. Simeone; G. Treideris; S. Viticoli
Exciton states in InxGa1-x As/GaAs double quantum wells: Normalized reflection spectra 1-gen-1995 D'Andrea, Andrea; Tomassini, N; Ferrari, L; Righini, M; Selci, S; Bruni, MARIA RITA; M, R; Simeoni, ; G,
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films 1-gen-1995 Romanato, Filippo; Vittorio Drigo, Antonio; Francesio, Laura; Franzosi, Paolo; Lazzarini, Laura; Salviati, Giancarlo; Mazzer, Massimo; Bruni, MARIA RITA; Grazia Simeone, Maria
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films 1-gen-1995 Romanato F; Drigo; AV; Francesio L; Franzosi P; Lazzarini L; Salviati G; Mazzer M; Bruni; MR; Simeone; MG
NORMALIZED REFLECTION SPECTRA IN GAAS/INXGA(1-X) AS SINGLE QUANTUM-WELLS - STRUCTURE CHARACTERIZATIONS AND EXCITONIC PROPERTIES 1-gen-1995 DANDREA, A ; TOMASSINI, N ; FERRARI, L ; RIGHINI, M ; SELCI, S ; BRUNI, MR ; SIMEONE, MG ; GAMBACORTI, N
Normalized reflection spectra in InxGa1-xAs/GaAs strained quantum wells: Structure and electronic properties 1-gen-1995 D'Andrea A;Tomassini N;Ferrari L;Righini M;Selci S;Bruni; M R;Simeone; M G
Raman studies of InAs/In0.53Ga0.47As single quantum wells grown on InP substrate by M.B.E. 1-gen-1995 G Quagliano, L; Simeone, ; Bruni, Mr; Gambacorti, N; Mzugarini,
Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures 1-gen-1995 M.R. Bruni; N. Gambacorti; S. Kaciulis; G. Mattogno; M.G. Simeone; L.G. Quagliano; N. Tomassini; B. Juserand
DEPTH PROFILING OF INAS/INP AND INxGA1-xAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY 1-gen-1994 Bruni, Mr; Gambacorti, N; Kaciulis, S; Mattogno, G; Simeone, Mg; Viticoli, S
Depth profiling of InxGa1-xAs/GaAs quantum wells 1-gen-1994 M.R. Bruni; S. Kaciulis; G. Mattogno; M.G. Simeone; S. Viticoli; F. Martelli
Mechanisms of strain release in molecular beam epitaxy grown InGaAs/GaAs buffer heterostructures 1-gen-1994 Ferrari, C; Franzosi, P; Lazzarini, L; Salviati, G; Berti, M; Drigo, Av; Mazzer, M; Romanato, F; Bruni, Mr; Simeone, Mg
Transmission electron microscopy, high resolution x-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layer 1-gen-1994 Salviati, G; Lazzarini, L; Ferrari, C; Franzosi, P; Milita, S; Romanato, F; Berti, M; Mazzer, M; Drigo, Av; Bruni, Mr; Simeone, Mg; Gambacorti, N
XPS and AES characterization of InP substrates for epitaxial growth 1-gen-1994 M.R. Bruni; S. Kaciulis; G. Mattogno; M.G. Simeone
XPS study of the InxGa1-xAs/GaAs interfaces 1-gen-1994 M.R. Bruni; S. Kaciulis; G. Mattogno; M.G. Simeone; S. Viticoli; F. Martelli