A technique based on shifted resist pattern and anisotropic wet etching has been developed for fabrication af quantum wires on (100) silicon and silicon/germanium substrates. The Electron Beam Lithography exposure of the same pattern properly shifted is used to obtain a mask for the subsequent wet etching. This etching takes advantage on the strong rate dependency on plane orientation and allows V groove shaped thin wires formation.
Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etching
E Giovine;
2000
Abstract
A technique based on shifted resist pattern and anisotropic wet etching has been developed for fabrication af quantum wires on (100) silicon and silicon/germanium substrates. The Electron Beam Lithography exposure of the same pattern properly shifted is used to obtain a mask for the subsequent wet etching. This etching takes advantage on the strong rate dependency on plane orientation and allows V groove shaped thin wires formation.File in questo prodotto:
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