The significance of both the density N, and the apparent built-in voltage V(a), as usually obtained from C-V measurements on Schottky barriers containing DX centers, is clarified. It is also shown that, owing to the non-equilibrium occupancy of the DX center, at low temperature the electron density in the flat-band region depends on the cooling rate of the sample
The influence of the DX center on the capacitance of Schottky barriers in n-type A1GaAs
S Franchi;E Gombia
1991
Abstract
The significance of both the density N, and the apparent built-in voltage V(a), as usually obtained from C-V measurements on Schottky barriers containing DX centers, is clarified. It is also shown that, owing to the non-equilibrium occupancy of the DX center, at low temperature the electron density in the flat-band region depends on the cooling rate of the sampleFile in questo prodotto:
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