Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x = 0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400-degrees-C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported
THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS
S Franchi;E Gombia;R Mosca;
1993
Abstract
Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x = 0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400-degrees-C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reportedFile in questo prodotto:
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