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Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x = 0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400-degrees-C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported

THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS

S Franchi;E Gombia;R Mosca;
1993

Abstract

Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x = 0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400-degrees-C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported
1993
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
WOS:A1993LB77100005
29
8
651
653
3
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=209928&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A5445%29
Sì, ma tipo non specificato
Schottky barrier devices
Semiconductors
3
info:eu-repo/semantics/article
262
A. Bosacchi; S. Franchi; E. Gombia; R. Mosca; F. Fantini. S. Franchi;R. Menozzi
01 Contributo su Rivista::01.01 Articolo in rivista
none
01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/188802
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