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The effects of the Al mole fraction of a thin (4nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435-degrees-C are studied

Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers

S Franchi;E Gombia;
1994

Abstract

The effects of the Al mole fraction of a thin (4nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435-degrees-C are studied
1994
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
WOS:A1994NQ48100051
30
10
820
822
3
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=289248&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D289248
Sì, ma tipo non specificato
SCHOTTKY-BARRIER DIODES; MOLECULAR BEAM EPITAXY
6
info:eu-repo/semantics/article
262
Bosacchi, A; Franchi, S; Gombia, E; MoscaF Fantini, R; Menozzi, R; Naccarella, S
01 Contributo su Rivista::01.01 Articolo in rivista
none
01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/188865
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