The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AlxGai-xAs, by comparing electron denisty data obtained by capacitance/voltage and Hall measurements. The experiments were carried out under saturated persistent photoconductivity conditions, as well as during isothermal capture transients. A D degrees bound state degenerated in energy with the conduction band is populated through low temperature photo-ionization of the DX center. The D degrees level comes very close in energy to the Gamma minimum when the direct-to-indirect gap transition is approached. Under defined conditions, the final stage of isothermal capture transients is dominated by the electron freezing into hydrogenic bound states linked to Gamma.
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs
P Frigeri;S Franchi;E Gombia;R Mosca
1994
Abstract
The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AlxGai-xAs, by comparing electron denisty data obtained by capacitance/voltage and Hall measurements. The experiments were carried out under saturated persistent photoconductivity conditions, as well as during isothermal capture transients. A D degrees bound state degenerated in energy with the conduction band is populated through low temperature photo-ionization of the DX center. The D degrees level comes very close in energy to the Gamma minimum when the direct-to-indirect gap transition is approached. Under defined conditions, the final stage of isothermal capture transients is dominated by the electron freezing into hydrogenic bound states linked to Gamma.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.