Al Schottky barriers have been prepared on n-In0.35Ga0.65As/buffer/GaAs structures using InxGa1-xAs buffers with different grading laws to reduce the defect density induced by lattice mismatch in the active In0.35Ga0.65As layer. Counter doped p(+) cap layers have been used to enhance the barriers. Using suitable cap and buffer parameters, barrier heights up to 0.67eV and ideality factors of 1.15 have been obtained.
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates
Motta A;Franchi S
1996
Abstract
Al Schottky barriers have been prepared on n-In0.35Ga0.65As/buffer/GaAs structures using InxGa1-xAs buffers with different grading laws to reduce the defect density induced by lattice mismatch in the active In0.35Ga0.65As layer. Counter doped p(+) cap layers have been used to enhance the barriers. Using suitable cap and buffer parameters, barrier heights up to 0.67eV and ideality factors of 1.15 have been obtained.File in questo prodotto:
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