InAs monolayer (QL) and self-aggregated quantum dots (QD) were grown by atomic layer MBE at 460 degrees C on an n-type GaAs-buffer layer and were capped with a 2 X 10(6)/cm(3) n-type GaAs layer. QDs significantly reduce the capacitance measured at 1 MHz compared to samples with QL, and the capacitance and conductance of QD samples exhibit strong frequency and temperature dependence. The I-V measurements show that single QDs are laterally coupled depending on the temperature. The fast defect transients measured in the 10 ns to 1 ys range show that the charge and discharge of QDs is similar to extended defects indicating that the broad peak in capacitance DLTS spectra cannot be interpreted as isolated point defects
The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures
S Franchi;P Frigeri;E Gombia;R Mosca
2000
Abstract
InAs monolayer (QL) and self-aggregated quantum dots (QD) were grown by atomic layer MBE at 460 degrees C on an n-type GaAs-buffer layer and were capped with a 2 X 10(6)/cm(3) n-type GaAs layer. QDs significantly reduce the capacitance measured at 1 MHz compared to samples with QL, and the capacitance and conductance of QD samples exhibit strong frequency and temperature dependence. The I-V measurements show that single QDs are laterally coupled depending on the temperature. The fast defect transients measured in the 10 ns to 1 ys range show that the charge and discharge of QDs is similar to extended defects indicating that the broad peak in capacitance DLTS spectra cannot be interpreted as isolated point defectsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
