The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures
P Frigeri;E Gombia;R Mosca;S Franchi
2000
Abstract
The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum wellFile in questo prodotto:
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