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The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well

Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

P Frigeri;E Gombia;R Mosca;S Franchi
2000

Abstract

The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well
2000
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
WOS:000087412500014
367
1-2
89
92
4
http://www.sciencedirect.com/science/article/pii/S004060900000701X
Sì, ma tipo non specificato
Quantum dots
Quantum wells
Molecular beam epitaxy growth of embedded heterostructures
3rd International Conference on Molecular Beam Epitaxy-Growth Physics and Technology (MBE-GPT 99) Location: WARSAW, POLAND Date: MAY 23-28, 1999 Sponsor(s):Polish Vacuum Soc; Polish Crystal Growth Soc; Inst Vacuum Technol; Polish Acad Sci, Inst Phys; Inst Electon Technol; State Comm Sci es
9
info:eu-repo/semantics/article
262
Horváth, Zsj; Dózsa, L; Van Tuyen, Vo; Pdör, B; Nemcsics, Á; Frigeri, P; Gombia, E; Mosca, R; Franchi, S
01 Contributo su Rivista::01.01 Articolo in rivista
none
01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/193369
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