Beryllium (Be) diffusion after rapid thermal annealing experiments is studied in heavily doped GaAs structures grown by MBE. SIMS measurements show that in p/p+ structures, Be diffusion is reduced by increasing the As4/Ga flux ratios. In contrast, no effect is observed in p/p+/p structures. Furthermore, Be concentration profiles measured after annealing experiments performed at 770 and 850°C for 30 s indicate that Be redistribution is almost independent of the annealing temperature. These results are discussed in terms of a substitutional interstitial diffusion mechanism.
Influence of the As/Ga flux ratio on diffusion of Be in MBE GaAs layers
R Mosca;S Franchi;P Frigeri;E Gombia;
2001
Abstract
Beryllium (Be) diffusion after rapid thermal annealing experiments is studied in heavily doped GaAs structures grown by MBE. SIMS measurements show that in p/p+ structures, Be diffusion is reduced by increasing the As4/Ga flux ratios. In contrast, no effect is observed in p/p+/p structures. Furthermore, Be concentration profiles measured after annealing experiments performed at 770 and 850°C for 30 s indicate that Be redistribution is almost independent of the annealing temperature. These results are discussed in terms of a substitutional interstitial diffusion mechanism.File in questo prodotto:
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