The Schottky barrier height in Al/n-In(0.35)Ga(0.65)As was engineered using thin p-type near-interface In(0.35)Ga(0.65)As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved.
Engineered Schottky barriers on n-In(0.35)Ga(0.65)As
S Franchi;P Frigeri;E Gombia;R Mosca;
2001
Abstract
The Schottky barrier height in Al/n-In(0.35)Ga(0.65)As was engineered using thin p-type near-interface In(0.35)Ga(0.65)As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved.File in questo prodotto:
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