In this work first room-temperature photoluminescence in strained single and multiple quantum wells of In,Ga, _ &/GaAs grown by molecular-beam epitaxy is presented. The In mole fraction x varies from 0.06 to 0.23 and the well width from 5 to 20 nm. The data suggest that carrier generation in the well is caused by trapping carriers photoexcited in GaAs. The thermal behavior of this mechanism must be taken into account when the temperature dependence of the luminescence is analyzed.
Room-temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular-beam epitaxy
Faustino Martelli;Maria Rita Bruni;
1992
Abstract
In this work first room-temperature photoluminescence in strained single and multiple quantum wells of In,Ga, _ &/GaAs grown by molecular-beam epitaxy is presented. The In mole fraction x varies from 0.06 to 0.23 and the well width from 5 to 20 nm. The data suggest that carrier generation in the well is caused by trapping carriers photoexcited in GaAs. The thermal behavior of this mechanism must be taken into account when the temperature dependence of the luminescence is analyzed.File in questo prodotto:
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