The growth morphology of Sn on InSb(100)-c(2x8) has been studied by means of Photoemission Spectroscopy (PES), and Low Energy Electron Diffraction (LEED). The crucial role of the substrate temperature and of the Sn evaporation rate, in order to epitaxially grow Sn in its alpha-phase, has been investigated in detail. By carefully choosing these parameters a high-quality thick film (similar to70 Angstrom) of alpha-Sn has been obtained. The a-Sn surface presents a semimetallic character and a (2x1)-2 domains reconstruction.
Sn on InSb(100)-c(2x8): growth morphology and electronic structure
Magnano E;Cepek C;
2002
Abstract
The growth morphology of Sn on InSb(100)-c(2x8) has been studied by means of Photoemission Spectroscopy (PES), and Low Energy Electron Diffraction (LEED). The crucial role of the substrate temperature and of the Sn evaporation rate, in order to epitaxially grow Sn in its alpha-phase, has been investigated in detail. By carefully choosing these parameters a high-quality thick film (similar to70 Angstrom) of alpha-Sn has been obtained. The a-Sn surface presents a semimetallic character and a (2x1)-2 domains reconstruction.File in questo prodotto:
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