An EBIC study of bulk micro defects (BMDs) in not-intentionally contaminated epi Si submitted to both relaxation and segregation gettering and with an unknown initial contaminant concentration below the sensitivity of DLTS has been carried out. It allowed to establish which was the contaminant (Fe) and the possible range of its initial concentration. An evaluation of the behaviour of the BMDs during relaxation gettering and of the contribution of relaxation gettering to the overall gettering process was performed.

Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering

C Frigeri;E Gombia;A Motta
2007

Abstract

An EBIC study of bulk micro defects (BMDs) in not-intentionally contaminated epi Si submitted to both relaxation and segregation gettering and with an unknown initial contaminant concentration below the sensitivity of DLTS has been carried out. It allowed to establish which was the contaminant (Fe) and the possible range of its initial concentration. An evaluation of the behaviour of the BMDs during relaxation gettering and of the contribution of relaxation gettering to the overall gettering process was performed.
2007
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Si
gettering
annealing
EBIC
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/200142
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