Electrical activation of B implanted in silicon at energies below 1 keV

An extensive characterization by Spreading Resistance Profiling of the electrical activation of ultra-low energy implanted boron in silicon is reported. The study of the dependence on the implant energy, dose and annealing temperature throws light on the mechanisms responsible for the electrical activation at implant energies below 1 keV. The thermal activation energy for the electrical activation of boron slightly depends on the implant dose and is in the range of 2-3 eV. The implication of these data for the fabrication of future generation devices is discussed.