Low dose implants of Si into semi-insulating GaAs have been annealed by multiply scanned electron beam yielding 100% activation, without the compensation threshold characteristic of thermal annealing, and a high drift mobility of 4100 cm2/Vs for a carrier concentration of 1.6×1017 cm-3. Secondary-ion mass spectroscopy analysis has revealed that the formation of a trough, depleted of Cr in correspondence with the implanted Si, is responsible for these results.
MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF SI IMPLANTED GAAS
NIPOTI R;
1982
Abstract
Low dose implants of Si into semi-insulating GaAs have been annealed by multiply scanned electron beam yielding 100% activation, without the compensation threshold characteristic of thermal annealing, and a high drift mobility of 4100 cm2/Vs for a carrier concentration of 1.6×1017 cm-3. Secondary-ion mass spectroscopy analysis has revealed that the formation of a trough, depleted of Cr in correspondence with the implanted Si, is responsible for these results.File in questo prodotto:
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