The use of TOF-SIMS for depth profiling was studied by means of cesium in negative mode. A calibration for the quantification of nitrogen in oxynitrides was performed using XPS and TOF-SIMS. Calibration was done using the TOF-SIMS profile as a model profile to calculate nitrogen concentration by means of XPS. By subsequently calculating the TRS, it was found that nitrogen and silicon have nearly the same ionization probability, while oxygen ionization probability is about two times higher. The behavior of ionization probabilities at high cesium concentration was explained in terms of the effect of cesium on the work function at the surface and of the local interaction of cesium on first neighbors.
Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Quantification of nitrogen
Perego M;
2002
Abstract
The use of TOF-SIMS for depth profiling was studied by means of cesium in negative mode. A calibration for the quantification of nitrogen in oxynitrides was performed using XPS and TOF-SIMS. Calibration was done using the TOF-SIMS profile as a model profile to calculate nitrogen concentration by means of XPS. By subsequently calculating the TRS, it was found that nitrogen and silicon have nearly the same ionization probability, while oxygen ionization probability is about two times higher. The behavior of ionization probabilities at high cesium concentration was explained in terms of the effect of cesium on the work function at the surface and of the local interaction of cesium on first neighbors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
