A study based on the measurement of self-diffusion of silicon in thermal silicon dioxide was presented. An isotropic exchange based methodology was used for obtaining the actual equilibrium diffusitivity in the oxide. A simple Arrhenius law that described the diffusivity measurement as the function of the temperature was also discussed.
Silicon self-diffusivity measurement in thermal SiO2 by 30Si/28Si isotopic exchange
Perego;
2003
Abstract
A study based on the measurement of self-diffusion of silicon in thermal silicon dioxide was presented. An isotropic exchange based methodology was used for obtaining the actual equilibrium diffusitivity in the oxide. A simple Arrhenius law that described the diffusivity measurement as the function of the temperature was also discussed.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


