A study based on the measurement of self-diffusion of silicon in thermal silicon dioxide was presented. An isotropic exchange based methodology was used for obtaining the actual equilibrium diffusitivity in the oxide. A simple Arrhenius law that described the diffusivity measurement as the function of the temperature was also discussed.

Silicon self-diffusivity measurement in thermal SiO2 by 30Si/28Si isotopic exchange

Perego;
2003

Abstract

A study based on the measurement of self-diffusion of silicon in thermal silicon dioxide was presented. An isotropic exchange based methodology was used for obtaining the actual equilibrium diffusitivity in the oxide. A simple Arrhenius law that described the diffusivity measurement as the function of the temperature was also discussed.
2003
Inglese
94
3
2136
2138
http://www.scopus.com/inward/record.url?eid=2-s2.0-0043011900&partnerID=40&md5=89b11957149e4d9c96638cf9df05a1da
cited By (since 1996)36
14
info:eu-repo/semantics/article
262
Mathiot, ; Da, ; Schunck, ; Jpa, ; Perego, Michele; Mb, ; Fanciulli, ; Mb, ; Normand, ; Pc, ; Tsamis, ; Cc, ; Tsoukalas, ; Dc,
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/201371
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