The influence of the ion energy and of the nominal SiO 2 thickness on the depth position of Si nanocrystals (ncs) obtained by low-energy ion beam synthesis was studied. The injection distance was found to decrease down to 2 nm by decreasing the oxide thickness from 10 nm down to 5 nm for a given implantation energy of 1 keV. The concentration gradient helped denuding the injection oxide during annealing. The results show that the fabrication of a two-dimensional (2D) array of ncs sufficiently insulated from the Si/SiO 2 interface is the result of a trade-off between two parameters.
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation
Perego;
2004
Abstract
The influence of the ion energy and of the nominal SiO 2 thickness on the depth position of Si nanocrystals (ncs) obtained by low-energy ion beam synthesis was studied. The injection distance was found to decrease down to 2 nm by decreasing the oxide thickness from 10 nm down to 5 nm for a given implantation energy of 1 keV. The concentration gradient helped denuding the injection oxide during annealing. The results show that the fabrication of a two-dimensional (2D) array of ncs sufficiently insulated from the Si/SiO 2 interface is the result of a trade-off between two parameters.File in questo prodotto:
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