In the present paper we report the electrical transport characterization of nanowires obtained by electron beam lithography and etching of (100) Si/SiGe heterostructures with a high mobility 2D electron gas.
Electrical characterization of nanowires fabricated on a Si/SiGe 2DEG
E GIOVINE;A NOTARGIACOMO;V FOGLIETTI;R LEONI;G CASTELLANO;G TORRIOLI;
2001
Abstract
In the present paper we report the electrical transport characterization of nanowires obtained by electron beam lithography and etching of (100) Si/SiGe heterostructures with a high mobility 2D electron gas.File in questo prodotto:
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