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In the present paper we report the electrical transport characterization of nanowires obtained by electron beam lithography and etching of (100) Si/SiGe heterostructures with a high mobility 2D electron gas.

Electrical characterization of nanowires fabricated on a Si/SiGe 2DEG

E GIOVINE;A NOTARGIACOMO;V FOGLIETTI;R LEONI;G CASTELLANO;G TORRIOLI;
2001

Abstract

In the present paper we report the electrical transport characterization of nanowires obtained by electron beam lithography and etching of (100) Si/SiGe heterostructures with a high mobility 2D electron gas.
2001
Inglese
Precision Engineering, Nanotechnology: Proceedings of the Euspen : 2nd International Conference European Society for Precision Engineering and Nanotechnology
Precision engineering nanotechnology - euspen : european society for precision engineering and nanotechnology. International conference No2
82
83
http://cat.inist.fr/?aModele=afficheN&cpsidt=14178480
27-31 May 2001
Torino
9
none
Giovine, E; Notargiacomo, A; DI GASPARE, L; Palange, E; Foglietti, V; Leoni, R; Castellano, G; Torrioli, G; Evangelisti, F
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/201549
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