The strain distribution in quantum wells of InxGa1-xAs/GaAs (x<0.25) is investigated by glancing-angle EXAFS. The measures have been performed at glancing angles below the critical angle for total reflection in order to avoid substrate contributions to the signal.
GLANCING ANGLE EXAFS INVESTIGATION OF INGAAS/GAAS STRAINED-LAYER MULTIPLE-QUANTUM WELLS - STRAIN AND BOND DISTANCES
S TURCHINI;MR BRUNI;T PROSPERI;
1993
Abstract
The strain distribution in quantum wells of InxGa1-xAs/GaAs (x<0.25) is investigated by glancing-angle EXAFS. The measures have been performed at glancing angles below the critical angle for total reflection in order to avoid substrate contributions to the signal.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
