The crystalline fraction of microcrystalline silicon films 18-200 nm thick, deposited by VHF plasma and by chemical transport deposition (CTD) was characterized by Raman and optical measurements. On a p-type CTD sample, thinner than 20 nm, a crystalline fraction as large as 78%, to our knowledge the largest obtained by VHF plasma on p-type films in this thickness range, was measured. Transmission electron microscopy shows crystallites extending to the interface with the substrate. Electrical conductivities in the range 10-2-100 S/cm, and 10-1-101 S/cm after annealing at 250°C, were measured. Weak dependence of crystalline fraction and electrical properties on thickness was observed.
Ultrathin mu c-Si films deposited by PECVD
Rizzoli R;Summonte C;Centurioni E;Ruani G;
2001
Abstract
The crystalline fraction of microcrystalline silicon films 18-200 nm thick, deposited by VHF plasma and by chemical transport deposition (CTD) was characterized by Raman and optical measurements. On a p-type CTD sample, thinner than 20 nm, a crystalline fraction as large as 78%, to our knowledge the largest obtained by VHF plasma on p-type films in this thickness range, was measured. Transmission electron microscopy shows crystallites extending to the interface with the substrate. Electrical conductivities in the range 10-2-100 S/cm, and 10-1-101 S/cm after annealing at 250°C, were measured. Weak dependence of crystalline fraction and electrical properties on thickness was observed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
