A strong increase in the room temperature photoluminescence efficiency in a-Si1-xNx:H multilayer structures with respect to thick single well layers is reported. This result has been correlated to carrier confinement in the well layers. The multilayer structures consist of a periodic sequence of barrier (E04=5.0 eV or 4.2 eV) and well layers (E04=2.1 to 2.6 eV), deposited by plasma enhanced chemical vapor deposition. Optical properties of these structures show a blue shift of the absorption edge, and evidence that the defect density associated with the internal interfaces is negligible. Electroluminescent devices have been obtained by inserting an a-Si1-xNx:H multilayer in a p-i-n structure. Such devices show a broad electroluminescence peak, in the yellow region of the visible spectrum, at about 2.1 eV.
Photoluminescence and electroluminescence properties of a-Si1-xNx : H based superlattice structures
Summonte C;Rizzoli R;
1998
Abstract
A strong increase in the room temperature photoluminescence efficiency in a-Si1-xNx:H multilayer structures with respect to thick single well layers is reported. This result has been correlated to carrier confinement in the well layers. The multilayer structures consist of a periodic sequence of barrier (E04=5.0 eV or 4.2 eV) and well layers (E04=2.1 to 2.6 eV), deposited by plasma enhanced chemical vapor deposition. Optical properties of these structures show a blue shift of the absorption edge, and evidence that the defect density associated with the internal interfaces is negligible. Electroluminescent devices have been obtained by inserting an a-Si1-xNx:H multilayer in a p-i-n structure. Such devices show a broad electroluminescence peak, in the yellow region of the visible spectrum, at about 2.1 eV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
