The effective dissipated power in SiH4-CH4-H-2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH4 concentration and decreases with increasing H-2 concentration. Optical electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.
POWDER DISSIPATION IN PECVD FOR SIH4-CH4-H-2 GAS-MIXTURES
RIZZOLI R;SUMMONTE;
1995
Abstract
The effective dissipated power in SiH4-CH4-H-2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH4 concentration and decreases with increasing H-2 concentration. Optical electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.File in questo prodotto:
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