Characterization and Modeling of Charging Effects in Dielectrics for the Actuation of RF MEMS Ohmic Series and Capacitive Shunt Switches

Charge accumulation in dielectrics solicited by an applied voltage, and the associated temperature and time dependencies are well known in scientific literature since a number of years [1]. The potential utilization of materials being part of a device useful for space applications is a serious issue because of the harsh environmental conditions and the necessity of long term predictions about aging, out-gassing, charging and other characteristic responses [2], [3]. Micro-mechanical Systems (MEMS) for RF applications have been considered for sensor applications as well as for high frequency signal processing during more than one decade [4], [5], [6], [7], [8], [9]. In this framework, RF MEMS switches are micro-mechanical devices utilizing, preferably, a DC bias voltage for controlling the collapse of metalized beams [8]. Magnetic [10], thermal [11] and piezoelectric [12] actuations have been also evaluated, but the electrostatic one seems to be until now preferred for no current flowing, i.e. a virtual zero power consumption, less complicated manufacturing processes and more promising reliable devices [13].