Ion implanted induced giant gettering of Gold in Silicon has been investigated by using 111 Si wafer implanted with 1016 Ar+ ions/cm2 at 280 keV. Some conditions of the appearance of giant gettering of Au in Si have been establi shed at different temperatures i.e. 500°C and 900°C: (i) annealing in vacuum, (ii) an "infinite" source of Au from a preannealed Au-Si film deposited by sputtering. On the basis of the experimental results a simple thermodinamic model explaining the giant gettering involving the mechanism of a liquid Au-Si phase has been developed.
ION-IMPLANTED INDUCED GIANT GETTERING OF GOLD IN SILICON
BENTINI;GG;NIPOTI R;
1980
Abstract
Ion implanted induced giant gettering of Gold in Silicon has been investigated by using 111 Si wafer implanted with 1016 Ar+ ions/cm2 at 280 keV. Some conditions of the appearance of giant gettering of Au in Si have been establi shed at different temperatures i.e. 500°C and 900°C: (i) annealing in vacuum, (ii) an "infinite" source of Au from a preannealed Au-Si film deposited by sputtering. On the basis of the experimental results a simple thermodinamic model explaining the giant gettering involving the mechanism of a liquid Au-Si phase has been developed.File in questo prodotto:
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