Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600 degrees C to 1750 degrees C. Annealing was conducted in a hot-wall CVD reactor using a silane-rich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750 degrees C.
Post-implantation annealing in a silane ambient using hot wall CVD
Nipoti R;
2006
Abstract
Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600 degrees C to 1750 degrees C. Annealing was conducted in a hot-wall CVD reactor using a silane-rich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750 degrees C.File in questo prodotto:
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