A post implantation microwave annealing technique has been used for the electrical activation of Al+ implanted ions in semi-insulating 4H-SiC. The annealing temperatures have been 2000-2100 degrees C. The implanted Al concentration has been varied from 5 x 10(19) to 8 x cm(-3). A minimum resistivity of 2 x 10(-2) Omega.cm and about 70% electrical activation of the implanted Al has been measured at room temperature for an implanted Al concentration of 8 x 10(2) cm(-3) and a microwave annealing at 2100 degrees C for 30 s.
High Dose Al+ Implanted and Microwave Annealed 4H-SiC
R Nipoti;F Mancarella;S Zampolli;
2012
Abstract
A post implantation microwave annealing technique has been used for the electrical activation of Al+ implanted ions in semi-insulating 4H-SiC. The annealing temperatures have been 2000-2100 degrees C. The implanted Al concentration has been varied from 5 x 10(19) to 8 x cm(-3). A minimum resistivity of 2 x 10(-2) Omega.cm and about 70% electrical activation of the implanted Al has been measured at room temperature for an implanted Al concentration of 8 x 10(2) cm(-3) and a microwave annealing at 2100 degrees C for 30 s.File in questo prodotto:
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