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Self-annealing implantation with dopant ions has been successfully applied to the fabrication of silicon solar cells. Experimental conditions as well as solar cell parameters are presented and discussed.

SELF-ANNEALED ION-IMPLANTED SOLAR-CELLS

MERLI PG;NIPOTI R;
1982

Abstract

Self-annealing implantation with dopant ions has been successfully applied to the fabrication of silicon solar cells. Experimental conditions as well as solar cell parameters are presented and discussed.
1982
Inglese
WOS:A1982PP67100023
41
10
967
968
3
http://apl.aip.org/resource/1/applab/v41/i10/p967_s1
Sì, ma tipo non specificato
2
info:eu-repo/semantics/article
262
GABILLI, E ; LOTTI, R ; MERLI, PG ; NIPOTI, R ; OSTOJA, P
01 Contributo su Rivista::01.01 Articolo in rivista
none
01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/205799
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