Abstract -- Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined.
Charging Effects and related Equivalent Circuits for Ohmic Series and Shunt Capacitive RF MEMS Switches
Romolo Marcelli;Giancarlo Bartolucci;Andrea Lucibello;Emanuela Proietti;
2008
Abstract
Abstract -- Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
