When Ti-Si diffusion couples are annealed in vacuum to form TiSi2, most of the oxygen contamination in the as-deposited metal film is lost. An experiment demonstrating that a Si loss also takes place is presented, thus confirming that the oxygen loss occurs by SiO sublimation.
SILICON LOSS DURING TISI2 FORMATION
NIPOTI R;BENTINI GG;
1987
Abstract
When Ti-Si diffusion couples are annealed in vacuum to form TiSi2, most of the oxygen contamination in the as-deposited metal film is lost. An experiment demonstrating that a Si loss also takes place is presented, thus confirming that the oxygen loss occurs by SiO sublimation.File in questo prodotto:
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