Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700°C. Chemical, structural and optical analysis have been performed on the samples. The change from amorphous to polycrystalline phase and the relative improvement of the chemical and optical properties have been observed on films grown at 700°C.
Synthesis of silicon carbide thin films by ion beam sputtering
A Convertino;
1998
Abstract
Synthesis of silicon carbide (SiC) films has been obtained by means of ion beam sputtering. The films have been grown by co-sputtering Si and C targets by means of two Ar-ion beams at substrate temperatures ranging between 30 and 700°C. Chemical, structural and optical analysis have been performed on the samples. The change from amorphous to polycrystalline phase and the relative improvement of the chemical and optical properties have been observed on films grown at 700°C.File in questo prodotto:
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