Hydrogenated microcrystalline silicon (uc-Si:H) films were prepared by Plasma Enhanced Chemical Vapour Deposition (PECVD) from a mixture of silane highly diluted in hydrogen. The effect of the hydrogen dilution on the deposition rate and on the electrical and structural properties were investigated. The hydrogen dilution appears to control orientation and grain size. Highly conductive ?c-Si:H films with a rough surface were grown with high deposition rate at hydrogen dilution of 3%. These films show an enhancement of the optical absorption in the near infrared region suitable for photovoltaic applications.
DEPENDANCE OF uc-Si:H FILM PROPERTIES ON HYDROGEN DILUTION
Marianna Ambrico;Rita Rizzoli
2002
Abstract
Hydrogenated microcrystalline silicon (uc-Si:H) films were prepared by Plasma Enhanced Chemical Vapour Deposition (PECVD) from a mixture of silane highly diluted in hydrogen. The effect of the hydrogen dilution on the deposition rate and on the electrical and structural properties were investigated. The hydrogen dilution appears to control orientation and grain size. Highly conductive ?c-Si:H films with a rough surface were grown with high deposition rate at hydrogen dilution of 3%. These films show an enhancement of the optical absorption in the near infrared region suitable for photovoltaic applications.File in questo prodotto:
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