Photoluminescence (PL) and resonant PL (RPL) have been performed at low temperatures in a number of InAs/GaAs quantum dots (QD's) whose emission energies range from 1.4 to 1.08 eV. A simple, standard electron-phonon interaction model reproduces PL and RPL spectra well. The value of the electron-phonon interaction S is large for small QD's and evolves to small values for large, well-formed QD's. This trend is consistent with recent experimental results in InAs QD's and provides an experimental basis to recent theoretical speculations. ©2000 The American Physical Society.

Optical evidence of polaron interaction in InAs/GaAs quantum dots

Frigeri;Franchi;
2000

Abstract

Photoluminescence (PL) and resonant PL (RPL) have been performed at low temperatures in a number of InAs/GaAs quantum dots (QD's) whose emission energies range from 1.4 to 1.08 eV. A simple, standard electron-phonon interaction model reproduces PL and RPL spectra well. The value of the electron-phonon interaction S is large for small QD's and evolves to small values for large, well-formed QD's. This trend is consistent with recent experimental results in InAs QD's and provides an experimental basis to recent theoretical speculations. ©2000 The American Physical Society.
2000
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
ELECTRONIC-STRUCTURE
SEMICONDUCTOR MICROCRYSTALLITES
PHONON INTERACTION
INAS
PHOTOLUMINESCENCE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/208228
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