We have experimented new growth parameters during the LEC pulling of several semi-insulating Fe-doped InP crystals. These new experiments are aimed at: i) increasing the yield of the growth process, ii) improving the homogeneity of the electrical properties across the wafers, iii) understanding the relationships between growth parameters and iron incorporation. We found that the pulling and cooling rates can influence the electrical activation of the incorporated iron (ratio Fe-active/Fe-total) while the crystal and crucible rotation speeds as well as the pulling rate can affect the effective Fe distribution coefficient.
Effect of growth parameters on iron incorporation in semi-insulating LEC Indium Phosphide
R Fornari;A Zappettini;
1996
Abstract
We have experimented new growth parameters during the LEC pulling of several semi-insulating Fe-doped InP crystals. These new experiments are aimed at: i) increasing the yield of the growth process, ii) improving the homogeneity of the electrical properties across the wafers, iii) understanding the relationships between growth parameters and iron incorporation. We found that the pulling and cooling rates can influence the electrical activation of the incorporated iron (ratio Fe-active/Fe-total) while the crystal and crucible rotation speeds as well as the pulling rate can affect the effective Fe distribution coefficient.File in questo prodotto:
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