CdTe crystals were grown by the vapour phase and by Bridgman method by using hihg purity and stoichiomety controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a "p" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed.

Luminescence properties of semi-insulating nominally-undoped CdTe crystals

A Zappettini;F Bissoli;L Zanotti
2002

Abstract

CdTe crystals were grown by the vapour phase and by Bridgman method by using hihg purity and stoichiomety controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a "p" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed.
2002
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
2002 12th International Conference on Semiconducting and Insulating Materials. SIMC-XII-2002
12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002)
IEEE Catalog Number: 02CH37343
110
113
0-7803-7418-5
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1242736
IEE The Institution of Electrical Engineers
London
REGNO UNITO DI GRAN BRETAGNA
Sì, ma tipo non specificato
JUN 30-JUL 05, 2002
Smolenize Castle, Slovakia
CADMIUM TELLURIDE
DEFECTS
Conference: 12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002) Location: SMOLENICE, SLOVAKIA Date: JUN 30-JUL 05, 2002 Sponsor(s): IEE; Slovak Acad Sci; IEEE Elect Devices Soc; CMK Ltd; Engn Control Syst
2
none
A. Zappettini; V. Corregidor; E. Dieguez; M. Zha; F. Bissoli; L. Zanotti
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/210362
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