The structural and optical properties of cadmium telluride crystals have been studied by means of X-ray diffraction and SEM-cathodoluminescence techniques. CdTe crystals were grown from the melt by a modified vertical Bridgman method and by physical vapour transport, from a 7N source material and without incorporation of any doping elements. The high resistivity required for the technological applications of this material was obtained only by controlling the stoichiometric ratio between Cd and Te. The crystalline quality of the samples was first checked from the FWHM of the high-resolution X-ray rocking curves. The X-ray topographies reveal an increasing defects density in the low resistivity crystals in addition to the presence of a large number of low angle grain boundaries. The low temperature luminescence spectra show the same emission bands for all the crystals studied except for the 1.4 eV band absent in the p-type Bridgman grown samples.

Optical and structural characterization of CdTe crystals grown by PVT and Bridgman methods

N Armani;C Ferrari;G Salviati;F Bissoli;A Zappettini;L Zanotti
2002

Abstract

The structural and optical properties of cadmium telluride crystals have been studied by means of X-ray diffraction and SEM-cathodoluminescence techniques. CdTe crystals were grown from the melt by a modified vertical Bridgman method and by physical vapour transport, from a 7N source material and without incorporation of any doping elements. The high resistivity required for the technological applications of this material was obtained only by controlling the stoichiometric ratio between Cd and Te. The crystalline quality of the samples was first checked from the FWHM of the high-resolution X-ray rocking curves. The X-ray topographies reveal an increasing defects density in the low resistivity crystals in addition to the presence of a large number of low angle grain boundaries. The low temperature luminescence spectra show the same emission bands for all the crystals studied except for the 1.4 eV band absent in the p-type Bridgman grown samples.
2002
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
2002 12th International Conference on Semiconducting and Insulating Materials. SIMC-XII-2002
12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002)
93
96
0-7803-7418-5
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1242732&punumber%3D8804%26sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A27848%29%26pageNumber%3D2
IEE The Institution of Electrical Engineers
London
REGNO UNITO DI GRAN BRETAGNA
Sì, ma tipo non specificato
JUN 30-JUL 05, 2002
Smolenice Castle, Slovakia
CADMIUM TELLURIDE
Conference: 12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002) Location: SMOLENICE, SLOVAKIA Date: JUN 30-JUL 05, 2002 Sponsor(s): IEE; Slovak Acad Sci; IEEE Elect Devices Soc; CMK Ltd; Engn Control Syst
7
none
Armani, N; Ferrari, C; Salviati, G; Bissoli, F; Zha, M; Zappettini, A; Zanotti, L
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/210365
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