As-grown semiconducting InP wafers containing iron at a level between 5 and 8x10(15) cm(-3) were seen to convert to semi-insulating, with high resitivity and good mobility, after a thermal treatment at 900 degrees C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers
R Fornari;A Zappettini;E Gombia;R Mosca;
1996
Abstract
As-grown semiconducting InP wafers containing iron at a level between 5 and 8x10(15) cm(-3) were seen to convert to semi-insulating, with high resitivity and good mobility, after a thermal treatment at 900 degrees C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper we report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donorsFile in questo prodotto:
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