Perovskite thin films with various functional properties have been synthesized through the Metal Organic Chemical Vapour Deposition (MOCVD). The MOCVD processes, used for the fabrication of a variety of advanced materials in thin film form, rely upon application of a molten multi-element source. The challenging in-situ strategy involves the use of a molten source consisting of a second-generation M(hfa)(n)center dot polyether (M = La, Ca, and Y; polyether = diglyme or tetraglyme) precursor which acts as a solvent for the other species. The approach is reported as a general route to the fabrication of multi-element oxides.

MOCVD approach to perovskite based thin films: From high Tc superconductors to giant dielectric constant materials

R G Toro;R Lo Nigro;
2010

Abstract

Perovskite thin films with various functional properties have been synthesized through the Metal Organic Chemical Vapour Deposition (MOCVD). The MOCVD processes, used for the fabrication of a variety of advanced materials in thin film form, rely upon application of a molten multi-element source. The challenging in-situ strategy involves the use of a molten source consisting of a second-generation M(hfa)(n)center dot polyether (M = La, Ca, and Y; polyether = diglyme or tetraglyme) precursor which acts as a solvent for the other species. The approach is reported as a general route to the fabrication of multi-element oxides.
2010
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/213470
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