Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures were grown on InP (100) substrates by using molecular beam epitaxy. The samples have been investigated by means of the selected-area X-ray spectroscopy and secondary ion mass spectrometry depth profiling techniques. The heterointerface widths in the samples grown under diverse MBE conditions (standard and virtual surfactant) have been analysed considering the limitations of the experimental depth resolution. The main factors limiting the depth resolution are disclosed. The asymmetry of quantum wells caused by different diffusion rates of indium in the heterointerfaces is revealed.
Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells
MR Bruni;S Kaciulis;S Viticoli
1996
Abstract
Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures were grown on InP (100) substrates by using molecular beam epitaxy. The samples have been investigated by means of the selected-area X-ray spectroscopy and secondary ion mass spectrometry depth profiling techniques. The heterointerface widths in the samples grown under diverse MBE conditions (standard and virtual surfactant) have been analysed considering the limitations of the experimental depth resolution. The main factors limiting the depth resolution are disclosed. The asymmetry of quantum wells caused by different diffusion rates of indium in the heterointerfaces is revealed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
