In this paper the design, fabrication and test of XBand and 2-18GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the XBand switch exhibits 1dB insertion loss, better than 37dB isolation and a power handling capability at 9 GHz of better than 39dBm at 1dB insertion loss compression point; the wideband switch has an insertion loss lower than 2.2dB, better than 25dB isolation and a power handling capability of better than 38dBm in the entire bandwidth.
High Power Microstrip GaN-HEMT Switches for Microwave Applications
E Giovine;
2008
Abstract
In this paper the design, fabrication and test of XBand and 2-18GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the XBand switch exhibits 1dB insertion loss, better than 37dB isolation and a power handling capability at 9 GHz of better than 39dBm at 1dB insertion loss compression point; the wideband switch has an insertion loss lower than 2.2dB, better than 25dB isolation and a power handling capability of better than 38dBm in the entire bandwidth.File in questo prodotto:
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